Study the Effect of Temperature on Energy Gap and Calculation Energies of the Effective Electronic Transitions and Wave lengths associated with those active energies of AlloyGa0.35In0.65As/InP

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Muthanna Journal of Pure Sciences – MJPS

Vol.3 – No. 2 / October 2016

Hassan Traikim Badh AL Hamade – Ali Nadhim Sabbar AL Yunsi
Department Of Physics, College Of Science, Al-Muthanna University


The thermal effects on the energy gap and the effect of width of potential well on the quantity properties of hetero- structure nano semiconductors (Ga0.35In0.65As/InP) have been studied.
The energy of quantum wells in conductive and valance bands of alloy has been calculated. Then have been calculated effective energies of transition electronics and associated wavelengths within those well. That was noted the energy gap increases due to reducing temperature to very low degrees also noted the emergence of quantum wells whenever reducing width of potential well to nano dimensions. The results showed that there are improvements in the physical properties of the alloy.

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